
©2012 Littelfuse, Inc.
Specifications are subject to change without notice.
Please refer to
http://www.littelfuse.com for current information.
TVS Diode Arrays (SPA
®
DJPEFT)
Revision: November 29, 2012
SP6002 Series
ESD and EMI Filter Devices - SP6002 Series
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause
permanent damage to the device. This is a stress only rating and operation of the device
at these or any other conditions above those indicated in the operational sections of this
specification is not implied.
Absolute Maximum Ratings
Symbol Parameter Value Units
T
OP
Operating Temperature -UP °C
T
STOR
Storage Temperature - to 150 °C
Thermal Information
Parameter Rating Units
Storage Temperature Range - to 150 °C
Maximum Junction Temperature 150 °C
Maximum Lead Temperature
(Soldering 20-40s)
260 °C
Electrical Characteristics (T
OP
=25ºC)
Parameter Symbol Test Conditions Min Typ Max Units
Reverse Standoff Voltage V
RWM
5.0 V
Breakdown Voltage V
BR
I
R
=1mA 7.0 V
Reverse Leakage Current I
-&",
V
RWM
=5V 0.1 1.0 µA
Resistance R
A
I
R
=10mA 80 100 120
Diode Capacitance
1,2
C
D
V
R
=2.5V,f=1MHz 15 pF
Line Capacitance
1,2
C
L
V
R
=2.5V,f=1MHz 24 30 36 pF
ESD Withstand Voltage
1
V
ESD
IEC61000-4-2 (Contact Discharge) ±15 kV
IEC61000-4-2 (Air Discharge) ±30 kV
Cutoff Frequency
3
F
-3dB
Above this frequency, appreciable
attenutation occurs
100 MHz
Notes:
1
Parameter is guaranteed by design and/or device characterization.
2
Total line capacitance is two times the diode capacitance (C
D
).
3
50 source and 50 load termination
Analog Crosstalk (S41)Insertion Loss (S21)
-60
-50
-55
-40
-30
-35
-45
-20
-25
-10
-5
0
10 100 1000
Inseron Loss(dB)
Frequency (MHz)
-15
-120
-100
-80
-60
-40
-20
0
10 100 1000
Inseron Loss(dB)
Frequency (MHz)
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